ONSEMI 2N7002DW Dual N-Channel MOSFET, 60V, SOT-363 SMD

The ONSEMI 2N7002DW is a dual N-channel enhancement-mode field-effect transistor (MOSFET) designed for efficient switching and amplification in low-power electronic circuits. It is characterised by its excellent combination of low on-resistance, low gate threshold voltage, and fast switching speeds, making it a highly responsive and energy-efficient component. The device also features low input capacitance, which minimises drive requirements and reduces overall power consumption in the system.

Housed in a compact SOT-363 surface-mount package, this dual MOSFET is ideal for high-density PCB designs where board space is at a premium. Its robust construction ensures reliable performance across a wide operating temperature range, suitable for demanding industrial environments. The symmetrical design, with identical specifications for both N-channel transistors, provides design flexibility and simplifies circuit layout.

Key Features

• Low On-Resistance: Minimises power loss and heat generation during conduction.
• Low Gate Threshold Voltage: Ensures easy drive compatibility with low-voltage logic circuits (e.g., 3.3V, 5V microcontrollers).
• Fast Switching Speed: Enables high-frequency operation in switching power supplies, motor drivers, and signal routing applications.
• Low Input/Output Leakage: Improves power efficiency, especially in battery-powered or standby circuits.
• Compact SMD Package: The SOT-363 footprint saves valuable PCB real estate.

With its balance of performance, size, and reliability, the ONSEMI 2N7002DW is a versatile choice for designers seeking to optimise their electronic assemblies for both efficiency and compactness.