ONSEMI FDC604P P-Channel MOSFET 20V 5.5A, SuperSOT
ONSEMI FDC604P P-channel MOSFET. 1.8V logic, 0.033ohm RDS(ON), 5.5A, in SuperSOT package for battery & load switching.
The ONSEMI FDC604P is a high-performance P-channel power MOSFET engineered using an advanced low-voltage PowerTrench® process. It is specified for operation at just 1.8V, making it an exceptionally efficient component for modern, power-sensitive designs. This device is highly optimised for demanding applications such as battery power management, load switching, and protection circuits, where low power loss and high reliability are critical.
A key advantage of this MOSFET is its extremely low on-state resistance (RDS(ON)) of just 0.033ohm at a 4.5V gate drive. This is achieved through the proprietary high-performance Trench technology, which minimises conduction losses and improves overall system efficiency. The component also boasts a fast switching speed, further enhancing its suitability for high-frequency power conversion and switching tasks.
Key Features & Applications
- Optimised for Low Voltage: Specifically designed for 1.8V gate drive, perfect for battery-powered and portable electronics.
- Extremely Low RDS(ON): Delivers minimal power loss and heat generation, maximising battery life and thermal performance.
- Fast Switching: Enables efficient high-frequency operation in power management circuits.
- Robust Construction: Packaged in a compact SuperSOT-6 surface-mount case, suitable for automated PCB assembly and space-constrained layouts.
- High Current Handling: Capable of a continuous drain current (Id) of up to 5.5A.
With a high maximum operating temperature of 150°C and a power dissipation rating of 1.6W, this MOSFET is built for durability and stable performance in challenging environments. Its surface-mount SuperSOT package offers excellent thermal characteristics and a small footprint, making it an ideal choice for modern, compact electronic designs.
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