Onsemi FDN306P P Channel MOSFET, 12V, 2.6A, SuperSOT, Surface Mount

The Onsemi FDN306P is a high-performance P-channel MOSFET that leverages advanced low-voltage PowerTrench® technology. Optimized for battery power management applications, this transistor delivers fast switching and exceptional efficiency in a compact SuperSOT package.

Thanks to its ultra-low on-state resistance (RDS(on)) of just 0.04 ohm, the FDN306P minimizes power losses and heat generation, making it ideal for modern portable and battery-operated devices. The device is designed for surface mounting, ensuring easy integration into automated manufacturing processes.

With a drain-source voltage of 12V and continuous drain current of 2.6A, it suits a wide range of low-voltage power management tasks. The gate-source threshold voltage is kept low (max 600mV), allowing direct control from 1.8V logic, perfect for battery-powered systems.

The MOSFET handles power dissipation up to 500mW and operates reliably up to 150°C. Its 3-pin SuperSOT package is space-saving and RoHS-compliant, with no SVHC substances as of June 2025.

Specifications

• Channel Type: P Channel
• Drain Source Voltage (Vds): 12V
• Continuous Drain Current (Id): 2.6A
• On-State Resistance (RDS(on)): 0.04 ohm
• RDS(on) Test Voltage: 4.5V
• Gate-Source Threshold Voltage (max): 600mV
• Power Dissipation: 500mW
• Transistor Case Style: SuperSOT
• Mounting: Surface Mount
• Pin Count: 3 Pins
• Operating Temperature Max: 150°C
• Technology: PowerTrench®
• Weight: 0.001 g

Packaging Dimensions

• Height: 43mm
• Width: 33mm
• Depth: 15mm

The Onsemi FDN306P is a reliable choice for engineers seeking efficient power management in compact, battery-powered designs.