ONSEMI FDN5630 N-Channel Power MOSFET 60V 1.7A, SuperSOT-3

The ONSEMI FDN5630 is a 60V N-channel PowerTrench® MOSFET engineered for superior efficiency in modern power electronics. This advanced semiconductor device has been specifically designed to achieve a low on-state resistance while maintaining minimal gate charge, resulting in excellent switching performance that is critical for high-frequency applications.

This latest medium-voltage power MOSFET combines several key advantages: a small gate charge (QG), a low reverse recovery charge (Qrr), and a soft recovery body diode. This combination facilitates fast and efficient synchronous rectification, making it a top choice for AC/DC power supply designs. By employing a shielded-gate structure for charge balance, the device achieves a significantly improved Figure of Merit (FOM), which is 66% lower than previous generations.

The soft body diode performance of this new PowerTrench® technology is a standout feature. It helps to minimise undesirable voltage spikes during switching, which can allow designers to eliminate snubber circuits or potentially replace higher-voltage-rated MOSFETs in their designs, simplifying the overall circuit and reducing component count.

Optimised for high-frequency DC/DC converters, this MOSFET is a versatile component suitable for a wide array of general-purpose applications where efficient power switching is paramount. Its surface-mount SuperSOT package offers a compact footprint ideal for space-constrained PCB layouts.

Key Specifications

• Channel Type: N Channel
• Drain-Source Voltage (Vds): 60 V
• Continuous Drain Current (Id): 1.7 A
• Drain-Source On-State Resistance (Rds(on)): 0.1 Ω (tested at 10V)
• Maximum Gate-Source Threshold Voltage: 2.4 V
• Power Dissipation: 500 mW
• Maximum Operating Temperature: 150°C
• Package / Case Style: SuperSOT (3-pin)
• Mounting Type: Surface Mount