ONSEMI FDS6681Z P-Channel Power MOSFET, 30V, 20A, SOIC SMD

The ONSEMI FDS6681Z is a -30V P-channel PowerTrench® MOSFET engineered to deliver exceptional power switching performance. It is specially designed to minimise on-state resistance while maintaining a low gate charge, resulting in superior efficiency and faster switching speeds. This makes it an excellent choice for demanding applications where thermal management and energy loss are critical concerns.

Utilising the latest medium voltage power MOSFET technology, this device combines a small gate charge (QG) with a small reverse recovery charge (Qrr) and a soft reverse recovery body diode. This specific combination is optimised for fast switching, particularly in synchronous rectification circuits within AC/DC power supplies. The advanced shielded-gate structure provides superior charge balance, leading to a significantly improved figure of merit (FOM).

A key benefit of the new PowerTrench® design is its soft body diode performance. This characteristic can help to eliminate the need for snubber circuits in some designs or may allow the replacement of higher voltage-rated MOSFETs, as it effectively minimises undesirable voltage spikes during synchronous rectification. The device also features an extended VGSS range of -25V, making it well-suited for battery-powered applications, and offers a typical HBM ESD protection level of ±3.8kV.

Built with high-performance trench technology, it achieves an extremely low RDS(on), ensuring high power and current handling capability in a compact SMD package. Its general-purpose design and robust specifications make it suitable for a wide array of electronic projects and commercial power systems.

Key Specifications

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): 30V
• Continuous Drain Current (Id): 20A
• Drain-Source On-State Resistance (RDS(on)): 0.0038 Ohm (4600µohm) @ 10V
• Gate-Source Threshold Voltage Max: 1.8V
• Power Diss