ONSEMI FDV305N N-Channel Power MOSFET, 20V, 900mA, SOT-23

The ONSEMI FDV305N is a high-performance N-Channel Power MOSFET engineered using the advanced PowerTrench® process. This technology is specifically optimised to deliver exceptional efficiency and reliability in demanding electronic applications, making it an ideal choice for modern circuit designs.

Key to its performance is the extremely low Drain-Source On-State Resistance (RDS(ON)) of just 0.22 ohms, which minimises power loss and heat generation. This is achieved through high-performance Trench technology, ensuring the component operates with maximum efficiency. The MOSFET also features a low gate charge, which contributes to its fast switching speed, crucial for applications requiring rapid on/off cycles.

With a continuous drain current rating of 900mA and a drain-source voltage (Vds) of 20V, it is robust enough for a variety of power management tasks. Its compact SOT-23 surface-mount package allows for high-density PCB layouts, saving valuable board space in portable and miniaturised electronics.

Primary Applications

This MOSFET is expertly optimised for use as a load switch and in battery protection circuits. Its characteristics make it perfectly suited for managing power distribution, protecting sensitive components from overcurrent, and enhancing the overall efficiency and safety of power systems in consumer electronics, power supplies, and portable devices.

Technical Specifications

• Channel Type: N-Channel
• Drain-Source Voltage (Vds): 20 V
• Continuous Drain Current (Id): 900 mA
• Drain-Source On-State Resistance (RDS(ON)): 0.22 Ω
• RDS(ON) Test Voltage: 4.5 V
• Gate-Source Threshold Voltage (Max): 1 V
• Maximum Power Dissipation: 350 mW
• Package / Case Style: SOT-23
• Mounting Type: Surface Mount
• Pin Count: 3 Pins
• Maximum Operating Temperature: 150°C <br