ONSEMI IGBT Single Transistor, 60A, 1.3kV, TO-247

The ONSEMI IGBT Single Transistor is a high-power semiconductor device engineered for robust performance in demanding switching applications. Designed with a TO-247 case style, it offers excellent thermal dissipation, making it a reliable choice for power conversion and motor control circuits where efficiency and durability are critical.

This transistor features a continuous collector current rating of 60A and a maximum collector-emitter voltage of 1.3kV, providing a significant safety margin for high-voltage designs. With a collector-emitter saturation voltage of just 1.75V, it ensures minimal power loss during conduction, contributing to overall system efficiency. The device is rated for a power dissipation of 500W and can operate at junction temperatures up to 175°C, ensuring stability under heavy load conditions.

Its through-hole mounting (3-pin) design facilitates secure mechanical and electrical connection on printed circuit boards (PCBs), suitable for wave soldering processes. The compact yet sturdy package dimensions contribute to effective heat sinking when used with an appropriate heatsink. This IGBT is a fundamental component for designers and engineers building industrial-grade power supplies, inverters, welding equipment, and uninterruptible power systems (UPS).