ONSEMI MMBT5551LT1G NPN High Voltage Transistor 160V 600mA SOT-23 SMD

The ONSEMI MMBT5551LT1G is an NPN silicon high-voltage transistor engineered for demanding electronic applications that require unique site and control change capabilities. Its robust construction and advanced specifications make it a highly reliable choice for modern circuit design.

This general-purpose transistor is PPAP capable and AEC-Q101 qualified, confirming its suitability for the stringent requirements of automotive and industrial environments. It is also a halogen-free component, aligning with modern environmental and safety standards.

Key Features

• High Voltage Capability: A maximum collector-emitter voltage (V_CE) of 160V allows it to handle significant potential differences in circuits.
• Adequate Current Handling: Supports a continuous DC collector current of 600mA, making it suitable for a variety of amplification and switching tasks.
• Surface-Mount Design: Supplied in a compact SOT-23 surface-mount device (SMD) package, ideal for space-constrained PCBs and automated assembly processes.
• Stable Gain: Offers a DC current gain (h_FE) of 80, providing consistent amplification performance.
• Wide Temperature Range: Can operate at temperatures up to 150°C, ensuring reliability in challenging thermal conditions.

With a power dissipation rating of 225mW, this bipolar junction transistor (BJT) offers an effective balance of performance and physical size. Its three-pin configuration in the industry-standard SOT-23 case style ensures compatibility with a wide range of circuit layouts and footprints.