
ONSEMI N-channel Power MOSFET, 100V, 1.7A, 0.35 ohm in SOT-223 surface mount package. Ideal for switched mode power supplies.
This ONSEMI N-channel enhancement-mode Power MOSFET is produced using advanced planar stripe and DMOS technology. This technology has been specifically tailored to reduce ON-state resistance, whilst providing superior switching performance and high avalanche energy strength.
Designed for reliability, the device is 100% avalanche tested and features a typical low gate charge of 5.8nC alongside a typical low Crss of 10pF. These characteristics ensure efficient and rapid switching capabilities, making it highly effective for demanding electronic circuits.
With a drain source voltage of 100V and a continuous drain current of 1.7A, this MOSFET is suitable for a variety of power management tasks. The surface mount SOT-223 package style features 4 pins and offers a compact footprint, with product dimensions of 43 mm in height, 33 mm in width, and 15 mm in depth. Weighing just 0.124 grams, it is ideal for space-constrained PCB layouts.
Key Specifications
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