ONSEMI N Channel Power MOSFET, 100V, 6.6A, SOT-223

The ONSEMI N Channel Power MOSFET is produced using Fairchild Semiconductors advanced PowerTrench® process, specifically tailored to minimise on-state resistance and switching losses. This makes it an efficient and reliable choice for demanding electronic applications.

A key feature of this component is the integrated Gate-Source (G-S) Zener, which has been added to enhance electrostatic discharge (ESD) voltage levels, providing improved protection for sensitive circuitry.

This surface-mount MOSFET is highly suitable for a variety of power management tasks, including DC/DC conversion, inverters, and synchronous rectification. Its robust specifications and compact SOT-223 package make it ideal for space-constrained designs requiring efficient power handling.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 100V
• Continuous Drain Current (Id): 6.6A
• Drain Source On-State Resistance: 0.022 ohm
• Transistor Case Style: SOT-223
• Transistor Mounting: Surface Mount
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 1.4V
• Power Dissipation: 2.2W
• Number of Pins: 4
• Operating Temperature Max: 150°C
• Product Range: PowerTrench

Whether you are designing power supplies or motor control systems, this ONSEMI MOSFET provides the performance and reliability required for modern electronic circuits.