ONSEMI N Channel Power MOSFET, 30V, 6.3A, SOT-223

The ONSEMI N Channel Power MOSFET is a 30V, 2.5V specified enhancement mode Field Effect Transistor produced using high cell density and DMOS technology. This high-density process is specifically tailored to minimise on-state resistance and provide superior switching performance, making it well-suited for low voltage and low current applications.

Based on advanced planar stripe and DMOS technology, this device features an internal gate-source ESD diode that allows it to withstand over 2kV HBM surge stress. It is designed to deliver reliable operation in switching power converter applications, including power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.

Key Features

• Switching loss improvements
• Lower conduction loss
• 100% avalanche tested
• Smaller stored energy in dynamic characteristics
• Lower gate charge (Qg) performance
• Improved system reliability in PFC and soft switching topologies

Housed in a compact SOT-223 surface mount package, this MOSFET measures 43 mm in height, 33 mm in width, and 15 mm in depth, with a lightweight design of just 0.281 grams. It is a versatile component suitable for a wide range of general-purpose applications requiring efficient power management and robust surge protection.