ONSEMI N-Channel Power MOSFET, 55V, 75A, TO-220AB

The ONSEMI HUF75339P3 is a high-performance 55V N-channel UltraFET Power MOSFET, engineered using advanced process technology to deliver exceptional power efficiency and reliability. This device achieves an extremely low on-resistance of just 0.012 ohm per silicon area, minimising power loss and heat generation in demanding applications.

Designed for robustness, this MOSFET is capable of withstanding high energy pulses in avalanche mode, enhancing its durability in stressful operating conditions. The integrated body diode exhibits a very low reverse recovery time and stored charge, which is critical for reducing switching losses and improving overall system efficiency in high-frequency circuits.

Key Applications

This versatile power MOSFET is an ideal component for a wide range of power management and control systems where efficiency is paramount. Its primary uses include switching regulators and DC-DC converters, motor drive controllers for precise speed and torque management, relay and solenoid drivers, and low-voltage bus switches. It is particularly well-suited for power management in portable, battery-operated devices, helping to extend operational life by minimising wasteful energy dissipation.

Housed in a robust TO-220AB through-hole package, it offers excellent thermal performance and ease of mounting on printed circuit boards (PCBs) for prototyping or production. With a high continuous drain current rating of 75A and a maximum power dissipation of 200W, it is built to handle significant electrical loads reliably.

Technical Specifications

• Channel Type: N-Channel
• Drain-Source Voltage (Vds): 55 V
• Continuous Drain Current (Id): 75 A
• Drain-Source On-State Resistance (Rds(on)): 0.012 Ω (tested at 10V)
• Maximum Gate-Source Threshold Voltage: 4 V
• Maximum Power Dissipation: 200 W
• Package / Case Style: TO-2