
ONSEMI N Channel Power MOSFET, 600V, 4.5A, TO-220F. Ideal for switched mode power supplies & PFC. Low gate charge, avalanche tested.
The ONSEMI N Channel Power MOSFET is produced using advanced planar stripe and DMOS technology. This enhancement mode device has been specifically tailored to minimise on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation mode.
Designed for general usage, this MOSFET is well suited for a variety of high-efficiency applications. It offers low gate charge, lower conduction loss, and switching loss improvements, making it an excellent choice for demanding circuit designs. Furthermore, it is 100% avalanche tested, ensuring improved system reliability in PFC and soft switching topologies.
Key Features
Whether you are designing high efficient switched mode power supplies, active power factor correction systems, or electronic lamp ballasts based on half bridge topology, this MOSFET provides a reliable and efficient solution.
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