ONSEMI N-Channel Power MOSFET 60V 170A TO-3P

The ONSEMI N-Channel Power MOSFET delivers robust performance for high-current switching applications. With a drain-source voltage of 60V and a continuous drain current of 170A, this transistor is engineered for demanding power management tasks.

The device features a low drain-source on-state resistance of 5600 µohm, ensuring efficient operation with minimal conduction losses. It is designed for through-hole mounting in a TO-3P package, providing reliable thermal performance and mechanical stability.

Key Specifications

• Channel Type: N Channel
• Drain-Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 170A
• On-State Resistance (Rds(on)): 5600 µohm (tested at 10V gate-source voltage)
• Gate-Source Threshold Voltage (Max): 2V
• Power Dissipation: 375W
• Operating Temperature (Max): 175°C

This MOSFET is suitable for a wide range of power electronics, including switch-mode power supplies, motor control, and DC-DC converters. Its high current rating and low resistance make it a dependable choice for industrial and automotive systems.

Dimensions

• Width: 33mm
• Depth: 15mm
• Height: 43mm
• Weight: 6 grams

The component is supplied with three pins for straightforward insertion into a PCB. With a maximum junction temperature of 175°C, it offers excellent thermal headroom for heavy-load operation.

Choose the ONSEMI N-Channel Power MOSFET for reliable, high-performance switching in your next project.