ONSEMI Power MOSFET, P Channel, 30 V, 13 A, 7700 µohm, SOIC

The ONSEMI P-Channel Power MOSFET is produced using the advanced PowerTrench® process, specifically tailored to minimise ON-state resistance. This makes it an efficient and reliable choice for your electronic circuits.

Featuring high-performance trench technology, this MOSFET ensures extremely low RDS (ON) alongside high power and current handling capabilities. It also includes 6kV typical HBM ESD protection, safeguarding your components from electrostatic discharge damage.

This device is particularly well-suited for load switching applications commonly found in portable battery packs, where efficiency and space-saving are critical. The surface-mount SOIC package allows for straightforward integration into automated assembly processes.

Key Specifications

• Channel Type: P Channel
• Drain Source Voltage (Vds): 30V
• Continuous Drain Current (Id): 13A
• Drain Source On-State Resistance: 7700µohm
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 1.9V
• Power Dissipation: 2.5W
• Number of Pins: 8
• Maximum Operating Temperature: 150°C
• Transistor Case Style: SOIC
• Mounting Type: Surface Mount

With physical dimensions of 43 mm in height, 33 mm in width, and 15 mm in depth, and a lightweight design of just 0.225 grams, this MOSFET is perfectly suited for compact, portable applications.