ONSEMI P Channel Power MOSFET, 60V, 17A, 0.07 ohm, TO-220F

The ONSEMI P Channel Power MOSFET is an advanced -60V enhancement mode QFET® produced using planar stripe and DMOS technology. This technology has been specifically tailored to reduce on-state resistance, whilst providing superior switching performance and high avalanche energy strength. Designed for general usage, this MOSFET is suitable for a wide variety of different applications.

Key features of this component include low gate charge and a 100% avalanche tested rating, ensuring robust performance under demanding conditions. It offers improved system reliability when used in Power Factor Correction (PFC) and soft switching topologies, alongside notable switching loss improvements and lower conduction loss. Furthermore, the device boasts a high maximum junction temperature rating of 175°C, contributing to its durability and operational stability in challenging environments.

With a compact TO-220F through hole mount, it facilitates straightforward installation onto circuit boards, making it a reliable choice for your electronic designs.

Key Specifications

• Channel Type: P Channel
• Drain Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 17A
• Drain Source On State Resistance: 0.07 ohm
• Case Style: TO-220F
• Mounting Type: Through Hole
• Power Dissipation: 47W
• Maximum Gate Source Threshold Voltage: 2V
• Number of Pins: 3