ONSEMI PNP Darlington Transistor TO-3 30A 120V

The ONSEMI PNP Darlington Bipolar Power Transistor is designed for through-hole mounting in a TO-204AA (TO-3) package. This robust component features a monolithic construction with a built-in base-emitter shunt resistor, ensuring reliable operation and a high DC current gain of up to 1000 hFE.

Engineered for demanding applications, this transistor serves as an excellent output device in complementary general-purpose amplifier circuits. It boasts a collector current of -30A and a collector to emitter voltage of -120V, making it highly capable of handling significant power loads with a maximum power dissipation of 200W. The device operates reliably across a wide junction temperature range from -55°C to 200°C.

Key Specifications

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: 120V
• Collector Current (Ic): 30A
• Power Dissipation (Pd): 200W
• DC Current Gain (hFE): 1000
• Collector Emitter Saturation Voltage: -3V at 20A
• Mounting Type: Through Hole
• Package / Case: TO-3 (TO-204AA)
• Number of Pins: 2

With its substantial power handling and compact dimensions of 43 mm x 33 mm x 15 mm, this transistor is ideally suited for signal processing, power management, and various consumer and industrial electronics.