ONSEMI SMD Dual MOSFET N and P Channel, PowerTrench, SOIC, 30V, 8.6A

This ONSEMI SMD Dual MOSFET features complementary N-channel and P-channel configurations, specifically tailored to minimise on-state resistance while maintaining low gate charge for superior switching performance. The medium voltage PowerTrench® technology is optimised for power switches, combining small gate charge (QG), small reverse recovery charge (Qrr), and a soft reverse recovery body diode. These features contribute to fast switching for synchronous rectification in AC/DC power supplies.

Employing a shielded-gate structure that provides charge balance, this device achieves a significantly lower figure of merit (QG x RDS(ON)) compared to previous generations. The soft body diode performance of this PowerTrench® MOSFET is able to eliminate the need for a snubber circuit or replace higher voltage rating MOSFETs, as it effectively minimises undesirable voltage spikes during synchronous rectification.

Key Features and Specifications

• High-performance trench technology for extremely low RDS(ON)
• High power and current handling capability
• Complementary N and P Channel
• Drain Source Voltage (Vds): 30V for both channels
• Continuous Drain Current (Id): 8.6A for both channels
• Drain Source On State Resistance: 0.017ohm for both channels
• SOIC package with 8 pins
• Maximum operating temperature: 150°C
• Product dimensions: 43 mm x 33 mm x 15 mm (H x W x D)
• Product weight: 0.134 grams