Power MOSFET N Channel 55 V 98 A TO-247AC Through Hole
N Channel Power MOSFET 55V 98A 8000µohm TO-247AC Through Hole. Fast switching, ultra low on-resistance.
The Power MOSFET N Channel 55 V 98 A TO-247AC Through Hole is a high-performance component engineered for demanding power applications. Utilising advanced processing techniques, this device achieves extremely low on-resistance per silicon area, ensuring efficient power handling and reduced energy losses. Combined with fast switching speed and a ruggedised design, this HEXFET power MOSFET delivers exceptional reliability and efficiency across a wide range of uses.
Key Features
- Dynamic dv/dt rating for enhanced robustness
- Fully avalanche rated for reliable operation in harsh conditions
- Advanced process technology for optimised performance
- Ultra low on-resistance for improved energy efficiency
- Fast switching capability for high-frequency applications
Technical Specifications
- Channel Type: N Channel
- Drain Source Voltage Vds: 55 V
- Continuous Drain Current Id: 98 A
- Drain Source On State Resistance: 8000 µohm
- Rds(on) Test Voltage: 10 V
- Gate Source Threshold Voltage Max: 4 V
- Power Dissipation: 150 W
- Transistor Mounting: Through Hole
- No. of Pins: 3 Pins
- Operating Temperature Max: 175 °C
This MOSFET is designed for through-hole mounting (TO-247AC package), facilitating easy integration into a wide variety of circuits. Its robust construction and advanced features make it a reliable choice for engineers seeking high efficiency and durability in their power management solutions. Whether used in switch-mode power supplies, motor control circuits, or other power conversion applications, this component delivers consistent performance you can depend on.
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