Power MOSFET N Channel 60V 310mA SOT-23 SMD

The Power MOSFET from ONSEMI is a high-performance N-channel small signal transistor designed for efficient switching in low-side load applications and level shift circuits. Utilising advanced Trench technology, this MOSFET delivers a low drain-to-source voltage, ensuring reliable operation across a variety of industrial and consumer electronics.

With a continuous drain current of 310mA and a pulse drain current of up to 1.2A, this component is capable of handling transient loads effectively. The device offers a maximum drain-source voltage of 60V and a low on-state resistance of 0.86 ohms, minimising power losses and improving overall system efficiency.

The transistor is housed in a compact SOT-23 package, making it ideal for space-constrained PCB layouts. It is designed for surface mount mounting, simplifying the assembly process and enabling high-density designs. The gate-source threshold voltage is 1V, and the device can withstand a maximum power dissipation of 420mW, providing robust performance in demanding operational environments.

This MOSFET is halogen-free, adhering to modern environmental standards, and is suitable for a wide range of applications including industrial automation, power management, and consumer electronics. Whether used for load switching, level shifting, or other low-power circuits, this component offers a dependable solution for engineers and hobbyists alike.