STMicroelectronics Power MOSFET N Channel 60V TO-220

The STP60NF06L from STMicroelectronics is a through-hole, 60 V N-channel STripFET™ II power MOSFET supplied in a TO-220 package. This power MOSFET is built using a unique STripFET process that minimises input capacitance and gate charge, making it an ideal primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, as well as any circuit requiring a low gate-charge drive.

With an exceptional dv/dt capability and avalanche testing, the device offers reliable performance in demanding switching environments. It delivers a continuous drain current of up to 60 A and a power dissipation of 110 W, while the low on-state resistance of 12 mΩ (at Vgs = 10 V) helps minimise conduction losses. The MOSFET operates across a wide junction temperature range from -65 °C to 175 °C.

Key specifications

• Channel type: N Channel
• Drain-source voltage (Vds): 60 V
• Continuous drain current (Id): 60 A
• Drain-source on-state resistance: 0.014 Ω
• Transistor case style: TO-220
• Mounting type: Through hole
• Rds(on) test voltage: 10 V
• Gate-source threshold voltage (max): 1 V
• Power dissipation: 110 W
• Pin count: 3
• Operating temperature range: -65 °C to 175 °C

This MOSFET is well suited for power management, consumer electronics, portable devices and industrial applications, delivering efficient and robust switching performance.