Power MOSFET P Channel 60 V 4.3 A SOT-223 Surface Mount

The Power MOSFET P Channel 60 V 4.3 A from Diodes Inc. is a P-channel enhancement mode MOSFET designed for high efficiency power management. Its advanced construction minimizes on-state resistance while maintaining superior switching performance, making it ideal for modern electronic circuits.

The device features fast switching speed, low gate drive requirements, and low input capacitance, ensuring efficient operation in high-frequency applications. The SOT-223 case style uses a UL94V-0 flame-rated moulded plastic housing, and the terminals are finished with matte tin annealed over a copper leadframe for reliable soldering and long-term durability.

Key Technical Specifications

• Channel Type: P Channel
• Drain Source Voltage (Vds): 60 V
• Continuous Drain Current (Id): 4.3 A
• Drain Source On-State Resistance: 0.125 Ω
• Transistor Case Style: SOT-223
• Transistor Mounting: Surface Mount
• Rds(on) Test Voltage: 10 V
• Gate Source Threshold Voltage Max: 1 V
• Power Dissipation: 2 W
• No. of Pins: 4 Pins
• Operating Temperature Max: 150 °C

This component is supplied in a SOT-223 package, suitable for automated assembly. Whether for power management, load switching, or DC-DC conversion, this MOSFET offers reliable performance in a compact footprint. Its low gate drive makes it compatible with low-voltage logic, simplifying circuit design.

Designed for surface mount applications, the device is ideal for space-constrained PCB layouts. With a power dissipation rating of 2 W and a maximum operating temperature of 150 °C, it ensures stable operation under demanding conditions. This MOSFET is a robust choice for engineers seeking efficiency and durability in power switching applications.