ST Microelectronics MOSFET Transistor N Channel 53A 500V

The STMicroelectronics STE53NC50 is a high-performance N-channel PowerMesh™II MOSFET, designed for demanding power conversion applications. With a 500V drain-source voltage and 53A continuous drain current, this transistor delivers robust performance in high-power systems. Its advanced layout improves the area figure of merit while maintaining excellent switching speed, minimized gate charge, and high ruggedness.

This MOSFET offers a very low on-state resistance of 0.08 ohm (at Vgs=10V), ensuring high efficiency and reduced power losses. The device is capable of high peak power dissipation of up to 460W and operates reliably at temperatures up to 150°C. Each unit is 100% Avalanche tested to guarantee reliability under stressful conditions.

Key features

• N-channel PowerMesh™II technology
• Extremely high dv/dt capability
• Minimized gate charge for faster switching
• High peak power and ruggedness
• 100% Avalanche tested

Applications

This MOSFET is ideal for use in DC-AC converters, welding equipment, uninterruptible power supplies, power management systems, and motor drive control. Its robust construction and high-voltage rating make it a dependable choice for industrial and commercial power electronics.

Specifications

• Channel Type: N Channel
• Continuous Drain Current (Id): 53A
• Drain-Source Voltage (Vds): 500V
• Drain-Source On-State Resistance (Rds(on)): 0.08 ohm
• Rds(on) Test Voltage: 10V
• Gate-Source Threshold Voltage (Max): 3V
• Power Dissipation: 460W
• Operating Temperature (Max): 150°C
• Dimensions: 43mm (H) x 33mm (W) x 15mm (D)
• Weight: 46.584g