STMICROELECTRONICS N-Channel Power MOSFET, 1.5 kV, 2.5 A, TO-3PF

The STMICROELECTRONICS N-Channel Power MOSFET is a robust and highly efficient power transistor, ideal for demanding switching applications. Built using the advanced PowerMESH™ technology, it is engineered to deliver exceptional performance with minimized switching losses. The device offers a high drain-source voltage rating of 1.5 kV and a continuous drain current of 2.5 A, making it suitable for high-voltage circuits.

A key feature is the 100% avalanche testing, ensuring ruggedness and reliability under stressful operating conditions. The intrinsic capacitances and gate charge (Qg) are minimized, facilitating high-speed switching which is crucial for improving efficiency in power supplies, motor drives, and inverters. The fully isolated TO-3PF plastic package provides enhanced safety with a typical creepage distance of 5.4 mm, reducing the risk of electrical tracking.

Manufactured using STMicroelectronics' consolidated strip layout-based MESHOVERLAY™ process, this MOSFET achieves a low drain-source on-state resistance (Rds(on)) of just 9 ohms, which helps to reduce conduction losses and heat generation. With a maximum power dissipation of 63W and an operating temperature range extending up to 150°C, it is designed for stable performance in challenging environments.

Key Specifications

• Channel Type: N Channel
• Drain-Source Voltage (Vds): 1.5 kV
• Continuous Drain Current (Id): 2.5 A
• Drain-Source On-State Resistance (Rds(on)): 9 Ω
• Package Type: 3-pin TO-3PF (Through Hole)
• Power Dissipation: 63 W
• Gate-Source Threshold Voltage (Max): 4 V
• Maximum Operating Temperature: 150°C
• Package Isolation: Fully isolated plastic package
• Typical Creepage Distance: 5.4 mm

This reliable power MOSFET is a perfect component for engineers designing efficient and compact power conversion systems.