STMICROELECTRONICS N-Channel Power MOSFET, 1 kV, 6.5 A, 1.85 ohm, TO-220

The STMICROELECTRONICS STP8NK100Z is a robust 1000V N-channel Power MOSFET, engineered with advanced Zener protection and built using the proprietary SuperMESH™ technology. This technology is an optimisation of the established PowerMESH™ layout, resulting in a component that pushes the boundaries of performance and reliability. A key achievement is the significant reduction in on-resistance, which directly contributes to lower power dissipation and helps meet today's stringent efficiency demands in power management applications.

Special design care ensures the device possesses an extremely high dv/dt capability, making it suitable for the most demanding industrial environments. This is complemented by a very low intrinsic capacitance and an improved ESD capability, enhancing its durability and operational stability. Every unit is 100% avalanche tested, guaranteeing consistent performance under stress conditions where energy spikes may occur.

Key Specifications & Features

• Channel Type: N-Channel
• Drain-Source Voltage (Vds): 1 kV (1000V)
• Continuous Drain Current (Id): 6.5 A
• Drain-Source On-State Resistance (Rds(on)): 1.85 ohm (tested at 10V)
• Gate-Source Threshold Voltage (Max): 3.75 V
• Maximum Power Dissipation: 160 W
• Transistor Case Style: Industry-standard TO-220 through-hole package
• Pin Count: 3 Pins
• Maximum Operating Temperature: 150°C
• Special Technology: SuperMESH™ for optimised performance
• Protection: Integrated Zener-protected

This MOSFET is designed for high-voltage switching and power conversion tasks, offering a reliable solution for engineers designing robust and efficient systems.