STMicroelectronics Power MOSFET N Channel 600V 4A 2 Ohm TO-220FP

The STMicroelectronics N Channel Power MOSFET is developed using advanced SuperMESH™ technology, which is achieved through the optimisation of the well-established strip-based PowerMESH™ layout. This innovative design significantly reduces on-resistance while ensuring excellent dv/dt capability, making it suitable for the most demanding applications.

This power MOSFET features improved gate charge and lower power dissipation, designed to meet challenging efficiency requirements. It is 100% avalanche tested and offers very low intrinsic capacitance. Additionally, the device is Zener-protected, safeguarding the gate against electrostatic discharge.

With a drain-source voltage of 600V and a continuous drain current of 4A, this component delivers reliable performance. The through-hole mounting and TO-220FP case style ensure straightforward installation on circuit boards.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 600V
• Continuous Drain Current (Id): 4A
• Drain Source On State Resistance: 2 Ohm
• Power Dissipation: 25W
• Gate Source Threshold Voltage Max: 3.75V
• Rds(on) Test Voltage: 10V
• Operating Temperature Max: 150°C
• Number of Pins: 3
• Dimensions: 43 mm x 33 mm x 15 mm
• Weight: 4.445 g