STMICROELECTRONICS N Channel Power MOSFET 800V 9A TO-247

The STMICROELECTRONICS Power MOSFET is an N Channel transistor designed for high-efficiency switching and amplification applications. With a robust drain source voltage of 800V and a continuous drain current of 9A, this component is built to handle demanding electrical loads while maintaining reliable performance.

Featuring a low drain source on-state resistance of 0.78 ohm, tested at 10V, this MOSFET ensures minimal power loss and heat generation during operation. It is housed in a TO-247 case style, which is ideal for effective heat dissipation, and is designed for through-hole mounting, providing a secure and stable connection on your circuit board.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 800V
• Continuous Drain Current (Id): 9A
• Drain Source On-State Resistance: 0.78 ohm
• Gate Source Threshold Voltage (Max): 3.75V
• Power Dissipation: 160W
• Maximum Operating Temperature: 150°C
• Number of Pins: 3

With a maximum operating temperature of 150°C and a power dissipation of 160W, this power MOSFET is engineered to endure challenging environments. Its compact dimensions of 43 mm x 33 mm x 15 mm make it suitable for a variety of circuit board layouts requiring high voltage and current capabilities.