STMicroelectronics N Channel Power MOSFET, 900 V, 11 A, 0.88 ohm, TO-247

The STMicroelectronics N Channel Power MOSFET is a high-performance zener protected SuperMESH™ device housed in a 3-pin TO-247 through-hole package. Designed for demanding switching applications, this MOSFET offers extreme optimization of ST's well-established strip-based PowerMESH™ layout, ensuring very good manufacturing repeatability and reliable performance across various uses.

This power MOSFET boasts several advanced electrical characteristics, including extremely high dv/dt capability and 100% avalanche testing for robust operation in challenging environments. Furthermore, the device benefits from minimized gate charge and very low intrinsic capacitance, which contribute to highly efficient and effective switching performance.

With a maximum drain source voltage (Vds) of 900V and a continuous drain current (Id) of 11A, this component is well-equipped for high-power applications. It provides a drain source on-state resistance (Rds(on)) of 0.88 ohm, measured at a test voltage of 10V, alongside a maximum gate source threshold voltage of 3.75V. The MOSFET supports a total power dissipation of 230W and operates reliably at temperatures up to 150°C. Its through-hole mounting style ensures a secure and stable installation on printed circuit boards.