STMicroelectronics P-Channel MOSFET TO-252 60V 35A

This STMicroelectronics P-Channel Power MOSFET is engineered using the advanced STripFET F6 technology with a trench gate structure, delivering excellent switching performance and efficiency for your power management applications. The device combines a very low on-resistance with a very low gate charge, which significantly reduces conduction and switching losses, making it ideal for high-frequency circuits and power conversion systems.

Engineered for ruggedness, this MOSFET offers high avalanche robustness, ensuring reliable operation even under demanding conditions. Its low gate drive power loss reduces driver requirements and improves overall system efficiency. The device comes in a compact, surface-mount TO-252 (DPAK) package, which simplifies PCB assembly and saves valuable board space.

Key Specifications:

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 35A
• On-State Resistance (Rds(on)): 0.025Ω (at Vgs = 10V)
• Gate-Source Threshold Voltage (Max): 2.5V
• Power Dissipation: 70W
• No. of Pins: 3
• Operating Temperature (Max): 175°C
• Product Range: STripFET F6

With a maximum operating temperature of 175°C and a robust power dissipation rating, this MOSFET is designed to perform reliably in challenging environments. Whether you are designing power supplies, motor controllers, or battery management systems, this component offers a dependable solution that combines high performance with durability.