STMICROELECTRONICS VNB35N07TR-E Power MOSFET, N-Channel, 80V, 18A, TO-263 (D2PA

The STMICROELECTRONICS VNB35N07TR-E is an OMNIFET fully auto-protected Power MOSFET manufactured using advanced VIPower® technology. Designed as a superior replacement for standard power MOSFETs, it is engineered for demanding DC to 50kHz applications across automotive, industrial, and power management systems.

This intelligent MOSFET integrates multiple built-in protection features to ensure reliable operation in harsh environments. These include thermal shutdown, linear current limitation, and an overvoltage clamp, all working to safeguard the chip from damage. Unique diagnostic feedback is available by monitoring the voltage at the input pin, providing real-time fault detection.

Key Features & Benefits

• Fully Protected: Integrated thermal, current, and overvoltage protection eliminates the need for additional external components, simplifying design and enhancing system robustness.
• Diagnostic Feedback: Enables sophisticated system monitoring and fault detection through the input pin, allowing for predictive maintenance and improved reliability.
• ESD Protected Input: The input pin includes Electrostatic Discharge protection, increasing durability during handling and assembly.
• Analogue Driving Compatibility: Offers direct access to the gate of the power MOSFET, supporting analogue driving methods for precise control.
• Drop-in Replacement: Fully compatible with standard power MOSFET footprints and driving circuits, facilitating easy upgrades in existing designs.

With a low drain-source on-state resistance (Rds(on)) of just 0.028 ohm, it ensures high efficiency and minimal power loss. The robust TO-263 (D2PAK) surface-mount package is designed for effective power dissipation, supporting a maximum power dissipation of 125W.

Ideal for engineers seeking a reliable, high-performance switching solution, the VNB35N07TR-E combines the convenience of a plug‑