TEXAS INSTRUMENTS SMD Power MOSFET N Channel NexFET Transistor - 60V 35A

The TEXAS INSTRUMENTS NexFET™ N-channel Power MOSFET is an advanced semiconductor component engineered to significantly minimise conduction and switching losses in demanding power conversion systems. Its cutting-edge NexFET™ technology offers exceptional efficiency, making it an ideal choice for high-performance applications where thermal management and energy savings are critical.

This surface-mount device (SMD) features an ultra-low gate charge (Qg) and gate-to-drain charge (Qgd), which directly contributes to faster switching speeds and reduced drive losses. The low thermal resistance of its compact plastic package ensures excellent heat dissipation, maintaining stable operation even under high load conditions. Furthermore, the component is fully avalanche-rated, providing robust protection against voltage transients and enhancing overall system reliability. It is constructed with halogen-free materials, aligning with modern environmental and safety standards.

Designed for a broad operating junction temperature range from -55°C to 150°C, this MOSFET delivers consistent performance in extreme environments. Its high current handling capability and low on-state resistance (RDS(on)) make it exceptionally efficient for power management tasks, helping to maximise battery life and reduce heat generation in compact designs.

Key Features & Benefits:

• High-Efficiency Design: Ultra-low Qg and Qgd parameters minimise switching losses for superior power conversion efficiency.
• Enhanced Thermal Performance: Low thermal resistance package design allows for effective heat dissipation, supporting sustained high-power operation.
• Robust & Reliable: Avalanche-rated construction ensures durability against electrical stress and voltage spikes.
• Environmentally Compliant: Halogen-free plastic package meets stringent environmental and safety regulations.
• Wide Temperature Range: A

Variant Details

• Size: 60V 35A