Opto Switch Slotted, Phototransistor, 890nm LED, 100mW

The OPB815L is a high-precision slotted opto switch designed for reliable object detection and position sensing. Featuring a deep-gap design, it consists of an infrared light-emitting diode (LED) and an NPN silicon phototransistor housed within a single, compact plastic module. When an opaque object passes through the slot, it interrupts the infrared beam, causing the phototransistor to switch its electrical state, enabling accurate non-contact sensing.

This versatile switch is engineered for demanding industrial environments, with a robust operating temperature range from -40°C to 80°C. Its panel or chassis mounting style and PC board solderable leads facilitate straightforward integration into a wide array of electronic assemblies and control systems. The infrared LED operates at an 890nm peak wavelength with a power dissipation of 100mW, ensuring consistent performance and long service life.

Ideal for enhancing automation, safety, and security, this component is a critical part of modern sensing solutions. Its through-beam sensing method provides a simple yet highly effective means of detecting the presence, absence, or position of objects without physical contact, reducing wear and maintenance.

Key Specifications:

• Sensing Method: Through Beam
• Output Type: Phototransistor
• LED Peak Wavelength: 890nm
• Power Dissipation: 100mW
• Forward Current (If): 20mA
• Forward Voltage: 1.7V
• Collector-Emitter Voltage Max: 30V
• Reverse Voltage (Vr): 2V
• Operating Temperature Range: -40°C to +80°C
• Mounting: Panel or Through Hole
• Package: Module
• Dimensions: 33mm (W) x 43mm (H) x 15mm (D)
• Weight: 2 grams

A dependable choice for engineers and designers requiring a solid-state switching solution for precise optical detection tasks.