VISHAY Dual N-Channel MOSFET 60V 5.3A 0.046 Ohm SOIC

The VISHAY Dual N-Channel TrenchFET Power MOSFET is a highly reliable surface-mount device designed for advanced power management and consumer electronics applications. Operating at 60V with a continuous drain current of 5.3A, this component provides efficient switching and power regulation. It features a low drain-source on-state resistance of just 0.046 ohm, ensuring minimal power loss and optimal performance during operation.

This LITTLE FOOT power MOSFET utilises integrated circuit and small-signal packages that have been specifically modified to deliver the superior heat transfer capabilities required by power devices. Furthermore, the component is entirely halogen-free, adhering to the strict IEC 61249-2-21 definition for environmentally conscious manufacturing.

With an SOIC case style and an 8-pin configuration, this MOSFET is suitable for compact, surface-mount layouts. It supports a maximum power dissipation of 3.1W and can operate in demanding environments with temperatures reaching up to 150°C. The product weighs just 0.119 grams and has dimensions of 43 mm in height, 33 mm in width, and 15 mm in depth.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 5.3A
• Drain Source On State Resistance: 0.046 ohm
• Transistor Case Style: SOIC
• Number of Pins: 8
• Power Dissipation: 3.1W
• Operating Temperature Max: 150°C