VISHAY IRF9520PBF P-Channel Power MOSFET, 100V, 6A, TO-220AB, Through Hole

The VISHAY IRF9520PBF is a high-performance P-Channel Power MOSFET designed to deliver the optimal balance of fast switching, rugged construction, low on-resistance, and cost-effectiveness. This through-hole transistor is engineered to meet the demands of modern power management applications, offering a reliable and efficient solution for both industrial and commercial environments.

Featuring a drain-source voltage of 100V and a continuous drain current of 6A, this component excels in high-voltage switching applications. The low on-resistance of 0.6 ohms and a gate-source voltage rating of ±20V ensure efficient operation and simple drive requirements. Its fast switching capability, combined with repetitive avalanche rating and a dynamic dv/dt rating, enhances system reliability and performance. The device also offers ease of paralleling, making it a flexible choice for various circuit designs.

The IRF9520PBF is housed in a TO-220AB package, ensuring compatibility with standard PCB layouts. Its low thermal resistance (2.5°C/W junction-to-case, 62°C/W junction-to-ambient) contributes to effective heat dissipation, promoting long-term stability and broad industry acceptance. With a maximum power dissipation of 40W and an operating temperature range up to 175°C, this MOSFET is built for demanding conditions. The component includes 3 pins and is designed for through-hole mounting, making it an ideal choice for prototyping and production alike.

Key Features

• High-speed switching for efficient power management
• Rugged design with repetitive avalanche rating
• Low on-resistance for reduced power loss
• Simple drive requirements with ±20V gate-source voltage
• Wide thermal resistance tolerance for reliable operation

Specifications

• Channel Type: P Channel
• Drain Source Voltage (Vds): 100V
• Continuous Drain Current (Id): 6A