VISHAY IRF9630PBF P-Channel Power MOSFET, 200V 6.5A, TO-220AB

The VISHAY IRF9630PBF is a high-performance single P-channel Power MOSFET, part of the third generation HEXFET® series. It delivers an ideal combination of fast switching, rugged device design, and low on-resistance, making it a versatile choice for a broad range of commercial and industrial applications. Housed in the industry-standard TO-220AB package, it is well-suited for power dissipation levels up to approximately 50W, while its robust construction supports demanding operating conditions.

This MOSFET features a -200V drain-source voltage and a continuous drain current of 6.5A, with a low on-state resistance of just 0.8ohm. It is designed for easy paralleling and simple drive requirements, reducing design complexity and improving system reliability. The device also includes a dynamic dV/dt rating and is rated for repetitive avalanche, ensuring robust performance in switching applications.

Key specifications include a gate-source threshold voltage of 4V maximum, a power dissipation of 74W, and a maximum operating temperature of 150°C, making it suitable for high-temperature environments. The transistor is a 3-pin device with a through-hole mounting style, compatible with standard PCB layouts.

Applications

• Power management systems
• Switching regulators
• Motor control circuits
• DC-DC converters
• Inverter circuits

With its versatile performance and proven HEXFET® technology, the VISHAY IRF9630PBF is an excellent choice for engineers seeking a reliable P-channel MOSFET for power control applications. Its easy-to-use design and robust electrical characteristics make it suitable for both prototyping and production environments.