VISHAY IRF9640PBF P-Channel Power MOSFET, 200V, 11A, TO-220AB

The VISHAY IRF9640PBF is a high-performance P-channel Power MOSFET designed for demanding commercial and industrial applications. As part of the third-generation HEXFET® series, it delivers an optimal blend of rapid switching speeds, a ruggedised device architecture, and exceptionally low on-resistance for efficient power handling.

Encased in the universally preferred TO-220AB package, this component is ideal for power dissipation levels up to approximately 50W. It features a robust dynamic dV/dt rating and is rated for repetitive avalanche conditions, ensuring reliable operation under stressful electrical transients. The device can operate at a maximum junction temperature of 175°C, providing a wide thermal safety margin for various designs.

A key advantage of the IRF9640PBF is its ease of use. It is designed for simple drive requirements, making integration into existing circuits straightforward. Furthermore, its characteristics allow for easy paralleling of multiple devices, enabling designers to scale current-handling capability for higher-power applications with confidence.

Specifications at a Glance

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): 200 V
• Continuous Drain Current (Id): 11 A
• Drain-Source On-State Resistance (Rds(on)): 0.5 ohm (tested at 10V)
• Maximum Gate-Source Threshold Voltage: 4 V
• Maximum Power Dissipation: 125 W
• Package / Case Style: TO-220AB
• Mounting Type: Through Hole
• Pin Count: 3 Pins
• Maximum Operating Temperature: 150°C

This MOSFET is a cornerstone component for engineers seeking a reliable, high-efficiency switch for power management tasks, combining proven performance with design flexibility.