VISHAY IRFBG30PBF N-Channel Power MOSFET, 1kV, 3.1A, TO-220AB

The VISHAY IRFBG30PBF is a third-generation N-channel Power MOSFET, engineered to combine fast switching, low on-resistance, and cost-effectiveness. This MOSFET is designed for demanding power applications where efficiency and reliability are key, making it a robust choice for a wide range of electronic circuits.

This power MOSFET features a 1 kV drain-source voltage and a continuous drain current of 3.1 A, with a low on-state resistance of 5 ohm to minimise conduction losses. The TO-220AB case style with through-hole mounting ensures easy installation on printed circuit boards. It offers a dynamic dV/dt rating and is repetitive avalanche rated, enhancing its ruggedness in stressful switching conditions. The device supports simple drive requirements and is easy to parallel for higher current applications. With an operating temperature range up to 150°C, it is suitable for high-temperature environments.

Key Features:

• Fast switching for efficient power conversion
• Low on-resistance (5 ohm) for reduced power dissipation
• Repetitive avalanche rated for robust performance
• Ease of paralleling for scalable power designs
• Simple drive requirements for ease of use
• Operating temperature up to 150°C

Applications:

This MOSFET is ideal for use in audio amplifiers, signal processing circuits, and industrial power systems where high voltage and fast switching are required. Its robust design ensures dependable operation in challenging environments.