VISHAY IRFU9024PBF P-Channel Power MOSFET, 60V, 8.8A, TO-251AA

The VISHAY IRFU9024PBF is a third-generation P-channel enhancement-mode Power MOSFET engineered to deliver the optimal balance of fast switching performance, a ruggedised device design, and exceptionally low on-state resistance. This component is specifically designed for through-hole mounting applications, offering robust construction and reliable operation in demanding electrical environments.

Capable of handling power dissipation levels of up to 1.5W in typical surface-mount configurations, this MOSFET is built to endure. Its advanced features include a high dynamic dV/dt rating, which enhances reliability in switching applications, and an ease of paralleling, allowing for scalable current-handling solutions in larger power systems. The component is also repetitively avalanche-rated, providing an added layer of protection against voltage transients.

Key Specifications and Features

• Channel Type: P-Channel enhancement mode
• Drain-Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 8.8A
• Drain-Source On-State Resistance (Rds(on)): 0.28 ohm (tested at 10V)
• Maximum Gate-Source Threshold Voltage: 4V
• Power Dissipation: 50W
• Transistor Case Style: TO-251AA (straight lead version)
• Mounting Type: Through Hole
• Number of Pins: 3
• Maximum Operating Temperature: 150°C
• Package Dimensions: 43mm (Height) x 33mm (Width) x 15mm (Depth)
• Weight: 0.4 grams

With its combination of ruggedness, efficiency, and ease of integration, the VISHAY IRFU9024PBF is a superior choice for designers seeking reliable power switching and management components.