VISHAY N Channel Power MOSFET, 100V, 5.6A, 0.54 Ohm, TO-220AB

The VISHAY N Channel Power MOSFET is a third-generation device engineered to deliver a combination of fast switching speeds, low on-resistance, and cost-effectiveness. Designed for high-efficiency performance, this transistor is well-suited for demanding electronic circuits requiring reliable power management.

Featuring a dynamic dV/dt rating and repetitive avalanche rating, this component ensures robust operation under challenging conditions. The fast switching capability, coupled with the ease of paralleling and simple drive requirements, makes it a versatile choice for designers and engineers looking to optimise their systems.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 100V
• Continuous Drain Current (Id): 5.6A
• Drain Source On State Resistance: 0.54 Ohm
• Transistor Case Style: TO-220AB
• Transistor Mounting: Through Hole
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 4V
• Power Dissipation: 43W
• Number of Pins: 3
• Operating Temperature Max: 175°C
• Dimensions: 43 mm x 33 mm x 15 mm
• Weight: 0.945 grams

Ideal for audio applications, signal processing, and industrial systems, this power MOSFET provides a dependable solution for a wide range of power switching and amplification tasks.