VISHAY N-Channel Power MOSFET, 40V, 3.9A, TO-236

The VISHAY N-Channel Power MOSFET is a high-performance, surface-mount transistor designed for efficient power management applications. Built on TrenchFET® technology, it offers a robust 40V drain-source voltage rating and a continuous drain current of 3.9A, making it suitable for demanding electronic circuits. Its low drain-source on-state resistance of just 0.042 ohm minimises power loss and heat generation, enhancing overall system efficiency and reliability. Every unit undergoes 100% gate resistance testing to ensure consistent performance and quality control.

Encased in a compact TO-236 (SOT-23) package, this MOSFET is ideal for space-constrained, surface-mount designs on printed circuit boards. It can dissipate up to 750mW of power and operates within a wide temperature range up to a maximum of 150°C, ensuring stability in various environmental conditions. With a gate-source threshold voltage maximum of 3V, it is well-suited for low-voltage drive circuits commonly found in modern digital systems.

Primary Applications

This component is expertly engineered for use in DC/DC converters, where it efficiently steps voltage up or down with minimal loss. It also performs excellently as a load switch, providing reliable control for powering subsystems on and off within a device. Its combination of low Rds(on), high current handling, and compact form factor makes it a versatile choice for power supply design, motor control modules, and battery management systems.

Key Specifications

• Technology: TrenchFET®
• Channel Type: N-Channel
• Drain-Source Voltage (Vds): 40 V
• Continuous Drain Current (Id): 3.9 A
• Drain-Source On-State Resistance (Rds(on)): 0.042 ohm @ 10V
• Package / Case: TO-236 (SOT-23), Surface Mount
• Power Dissipation: 750 mW
• Gate-Source Threshold Voltage (Max): 3 V
• **Operating Temperature