VISHAY N-Channel Power MOSFET, 60V, 10.3A, 0.022 ohm, PowerPAK SO

The VISHAY N-Channel Power MOSFET is a high-performance, fast switching TrenchFET® designed for demanding applications. Featuring a low 1.07mm profile and low thermal resistance, this surface mount device ensures efficient power management and space-saving integration into your circuit designs.

With a drain-source voltage of 60V and a continuous drain current of 10.3A, this MOSFET delivers robust performance. The low drain-source on-state resistance of 0.022 ohm minimises conduction losses, enhancing overall system efficiency. It is also halogen-free, making it an environmentally conscious choice for modern electronics.

Applications

This power MOSFET is specifically suitable for use as a secondary synchronous rectifier and a primary side switch for 24V DC/DC applications, commonly found in industrial environments.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 10.3A
• Drain Source On State Resistance: 0.022 ohm
• Gate-Source Voltage: ±20V
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 3V
• Power Dissipation: 1.8W
• Transistor Case Style: PowerPAK SO
• Mounting: Surface Mount
• No. of Pins: 8
• Operating Temperature Max: 150°C
• Profile Height: 1.07mm

Engineered for reliability and efficiency, the VISHAY N-Channel Power MOSFET is an excellent choice for your industrial power switching needs.