VISHAY N Channel Power MOSFET, 60V, 2.3A, 0.156 ohm, TO-236

The VISHAY N Channel Power MOSFET is a high-performance TrenchFET® designed for efficient power management in industrial applications. This surface-mount device offers a drain-source voltage of 60V and a continuous drain current of 2.3A, making it suitable for a variety of switching and amplification tasks. With a low drain-source on-state resistance of 0.156 ohm, it ensures minimal power loss and enhanced efficiency during operation.

This component is rigorously tested, featuring 100% Rg testing and 100% UIS testing to guarantee reliability and robustness in demanding environments. It supports a gate-source voltage of ±20V and has a maximum gate source threshold voltage of 3V. The MOSFET comes in a compact TO-236 case style with 3 pins, facilitating straightforward surface-mount assembly onto circuit boards.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 2.3A
• Drain Source On State Resistance: 0.156 ohm
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 3V
• Gate-Source Voltage: ±20V
• Power Dissipation: 1.09W
• Operating Temperature Max: 150°C
• Transistor Case Style: TO-236
• Transistor Mounting: Surface Mount
• No. of Pins: 3
• Product Weight: 0.04 grams
• Dimensions: 43 mm x 33 mm x 15 mm

Designed for industrial applications, this MOSFET provides dependable performance and ease of integration for your electronic projects.