VISHAY P-Channel Power MOSFET 200V 12A TO-247AC

The VISHAY P-Channel Power MOSFET is a high-performance semiconductor component designed for demanding power management applications. This through-hole device features a robust TO-247AC package, offering excellent thermal performance and reliability in circuit designs requiring efficient switching and control.

With a high drain-source voltage (Vds) rating of 200V and a continuous drain current (Id) capability of 12A, this MOSFET is engineered to handle significant power loads. Its low drain-source on-state resistance (Rds(on)) of just 0.5ohm at a 10V test voltage ensures minimal power loss and heat generation during operation, contributing to overall system efficiency.

The component boasts a maximum power dissipation of 150W and can operate in temperatures up to 150°C, making it suitable for industrial and automotive environments. Its P-channel configuration provides design flexibility, often simplifying drive circuitry in specific applications such as high-side switches.

Key Specifications

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): 200V
• Continuous Drain Current (Id): 12A
• Drain-Source On-State Resistance (Rds(on)): 0.5ohm @ 10V
• Gate-Source Threshold Voltage (Max): 2V
• Power Dissipation: 150W
• Package / Case: TO-247AC (Through Hole)
• Pin Count: 3 Pins
• Maximum Operating Temperature: 150°C

This VISHAY MOSFET is a reliable choice for engineers and hobbyists looking for a durable and efficient switching solution for power conversion, motor control, and load management systems.