VISHAY P Channel Power MOSFET, 60V, 90A, TO-220AB

The VISHAY P Channel Power MOSFET is engineered for robust industrial applications, delivering reliable performance and high efficiency. Featuring advanced TrenchFET® technology, this power MOSFET operates with a maximum temperature of 175°C, making it suitable for demanding environments where thermal management is crucial.

Key Performance Characteristics

This component offers a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 90A, ensuring substantial power handling capabilities. The drain-source on-state resistance is exceptionally low at 9300µohm, which minimises conduction losses and improves overall system efficiency. It supports a gate-source voltage of ±20V and features a maximum gate source threshold voltage of 1V.

Thermal and Physical Specifications

Effective heat dissipation is facilitated by a junction-to-ambient thermal resistance of 62°C/W and a junction-to-case thermal resistance of 0.6°C/W. The power dissipation rating is 2.4W. Encased in a TO-220AB package with a through-hole mounting style and 3 pins, it measures 43 mm in height, 33 mm in width, and 15 mm in depth, with a lightweight design of just 2 grams. This compact form factor ensures easy integration into various circuit board layouts.

• TrenchFET® technology for efficient switching
• Drain Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 90A
• Low on-state resistance: 9300µohm
• Maximum operating temperature: 175°C