VISHAY SI2305CDS-T1-GE3 MOSFET, P Channel, 8V, 5.8A

The VISHAY SI2305CDS-T1-GE3 is a P-channel enhancement-mode Power MOSFET featuring a TrenchFET® design, optimized for efficient load switching and DC-to-DC converter applications. With a Drain-Source Voltage (Vds) of 8V and a continuous Drain Current (Id) of 5.8A, this MOSFET delivers reliable performance in compact, surface-mount designs.

Engineered for industrial, power management, and portable device applications, the SI2305CDS-T1-GE3 undergoes 100% Rg testing to ensure consistent gate resistance, contributing to predictable switching behavior. It operates over a wide temperature range from -55°C to 150°C, making it suitable for demanding environments. The device is halogen-free, supporting environmentally conscious manufacturing.

Key Specifications:

• Channel Type: P Channel
• Drain Source Voltage (Vds): 8V
• Continuous Drain Current (Id): 5.8A
• Drain Source On-State Resistance (Rds(on)): 0.035Ω
• Rds(on) Test Voltage: 4.5V
• Gate Source Threshold Voltage Max: 1V
• Power Dissipation: 1.7W
• Transistor Case Style: SOT-23
• Transistor Mounting: Surface Mount
• No. of Pins: 3
• Operating Temperature Range: -55°C to 150°C

This MOSFET is ideal for designers seeking a compact, efficient switching solution with robust thermal performance and ease of integration into PCB layouts. Its small SOT-23 package and low on-state resistance help minimize power losses and save board space, making it a versatile choice for modern electronic designs.