VISHAY SI4463CDY-T1-GE3 P-Channel MOSFET, 20V, 18.6A, SOIC

The VISHAY SI4463CDY-T1-GE3 is a 2.5VGS TrenchFET® P-channel enhancement-mode Power MOSFET, engineered for high efficiency in demanding power management applications. Its advanced TrenchFET® technology delivers low on-state resistance and fast switching, making it an ideal choice for adaptor switches, high current load switches, and notebook power paths.

This MOSFET is rigorously tested to ensure reliability: 100% Rg tested and 100% UIS tested guarantee consistent performance and ruggedness. The device is halogen-free, supporting environmentally conscious designs, and operates over a wide -55°C to 150°C temperature range, suitable for industrial environments.

Key Specifications:

• Channel Type: P-Channel
• Drain Source Voltage (Vds): 20V
• Continuous Drain Current (Id): 18.6A
• Drain Source On-State Resistance: 8000µohm
• Transistor Case Style: SOIC
• Mounting Type: Surface Mount
• Gate Source Threshold Voltage (Max): 600mV
• Power Dissipation: 5W
• Number of Pins: 8
• Operating Temperature Max: 150°C
• MSL: MSL 1 - Unlimited

With its compact SOIC package and surface mount design, this MOSFET is perfect for space-constrained PCB layouts. Whether used in industrial power supplies, battery management, or load switching, the SI4463CDY-T1-GE3 provides robust and efficient performance, backed by Vishay's reputation for quality.