Vishay SIS412DN-T1-GE3 N-Channel MOSFET 30V 12A PowerPAK

The SIS412DN-T1-GE3 is a high-performance N-channel TrenchFET® Power MOSFET from Vishay, designed for efficient switching in modern electronics. With a drain-source voltage of 30V and a continuous drain current of 12A, this MOSFET delivers reliable power management in a compact PowerPAK 1212 package.

Featuring a low on-state resistance of 0.024Ω (tested at 10V) and a maximum gate-source threshold voltage of 1V, this component ensures efficient operation with minimal power loss. Capable of dissipating up to 15.6W, it is well-suited for load switching and power-management tasks in computers and consumer electronics.

This MOSFET is halogen-free according to the IEC 61249-2-21 definition and is 100% Rg tested, ensuring quality and environmental compliance. Its surface-mount design and 8-pin configuration make it ideal for automated assembly.

Applications

Ideal for load switches in notebook PCs, desktop PCs, and game stations, as well as general power management in consumer electronics and computer peripherals.

Key Specifications

• Channel Type: N-Channel
• Drain-Source Voltage (Vds): 30V
• Continuous Drain Current (Id): 12A
• On-State Resistance (Rds(on)): 0.024Ω
• Power Dissipation: 15.6W
• Operating Temperature Max: 150°C
• Package: PowerPAK 1212
• Mounting: Surface Mount
• Pins: 8