DIODES INC. Bipolar (BJT) Single Transistor, PNP, 500mW, SOT-23, SMD - 100V 1A

The DIODES INC. Bipolar (BJT) Single Transistor is a high-performance PNP silicon planar medium-power component designed for demanding electronic applications. It features a remarkably low equivalent on-resistance (RCE (sat)) of just 355mΩ at 1A, which minimises power loss and enhances efficiency in switching and amplification circuits. Encased in a compact SOT-23 surface-mount package, this transistor is engineered for reliability across a broad operating temperature range from -55°C to 150°C.

This transistor is part of a complementary pair, with the FMMT491 available as the matching NPN type, allowing for flexible circuit design in push-pull and other complementary configurations. Its robust specifications make it an excellent choice for power management tasks, where controlling current and voltage with precision is critical. The device is also well-suited for various industrial control systems, motor drivers, and power supply units where consistent performance under thermal stress is required.

Key Features and Specifications

• Low On-Resistance: Delivers high efficiency with an RCE (sat) of 355mΩ at 1A collector current.
• High Voltage Rating: Features a collector-emitter voltage (VCE) maximum of 60V, providing a good safety margin for many circuit designs.
• Substantial Current Handling: Capable of a continuous collector current (IC) of 1A, making it suitable for medium-power applications.
• Optimised Power Dissipation: Rated for 500mW power dissipation, balancing performance with thermal management in a small footprint.
• High Frequency Operation: Offers a transition frequency (fT) of 150MHz, supporting use in circuits requiring fast switching speeds.
• Stable Gain: Provides a DC current gain (hFE) of 100, ensuring predictable amplification characteristics.
• Robust Construction: Manufactured as a surface-mount device (SMD) in the industry-standard S

Variant Details

• Size: 100V 1A