ONSEMI Bipolar Junction (BJT) Single Transistor, NPN, TO-220 - 400V 12A 100W

The ONSEMI Bipolar Junction (BJT) Single Transistor in the TO-220 package is engineered for demanding high-power, high-speed switching applications. This NPN epitaxial planar power transistor is characterised by its robust high voltage capability and excellent power dissipation, making it a reliable component for industrial and commercial electronic systems.

Featuring a high collector-base voltage rating, this transistor is designed to handle significant electrical loads efficiently. Its fast-switching characteristics are ideal for applications where precise control and speed are critical, ensuring minimal energy loss and optimal performance in dynamic circuits.

Key Features & Design

• High Voltage & Current Handling: Built to manage high collector-emitter voltages and continuous collector currents, providing stability in power-intensive environments.
• Optimised for Switching: The epitaxial planar construction and high transition frequency facilitate rapid on/off switching, essential for modern power management and motor control circuits.
• Thermal Management: Housed in a classic TO-220 package, the transistor offers excellent power dissipation, helping to maintain operational integrity even under substantial thermal load.
• Design Flexibility: Available in multiple DC current gain (hFE) bin classes, allowing engineers to select the optimal performance characteristic for their specific circuit design requirements.

With its through-hole mounting and three-pin configuration, integration into prototype boards and final production assemblies is straightforward. The component's construction ensures durability and long-term reliability, meeting the needs of professional electronic design.

Variant Details

• Size: 400V 12A 100W