TAIWAN SEMICONDUCTOR TSM2306CX N-Channel Power MOSFET, SOT-23, 30V, 3.5A

The TAIWAN SEMICONDUCTOR TSM2306CX is a high-performance N-channel Power MOSFET designed for efficient power management and switching applications. Engineered using an advanced trench process technology and a high-density cell design, it delivers ultra-low on-resistance (Rds(on)), which minimises power loss and improves overall system efficiency. This makes it an ideal component for a wide range of industrial electronic designs where reliable performance and thermal management are critical.

The MOSFET features a robust 30V drain-source voltage rating and a continuous drain current capability of 3.5A. Its compact SOT-23 surface-mount package is perfect for space-constrained PCB layouts, offering a reliable and solderable solution for modern electronics manufacturing. The device is characterised by a low gate-source threshold voltage, ensuring it can be effectively driven by low-voltage logic circuits.

Key Features & Specifications

• Ultra-Low On-Resistance: A drain-source on-state resistance (Rds(on)) of just 0.046Ω at 10V test voltage significantly reduces conduction losses.
• Robust Electrical Ratings: Rated for 30V drain-source voltage (Vds) and a continuous drain current (Id) of 3.5A.
• Wide Gate-Source Voltage Range: Can withstand gate-source voltages of up to ±20V.
• Thermal Performance: Features a junction-to-case thermal resistance of 75°C/W and a junction-to-ambient thermal resistance of 130°C/W for effective heat dissipation.
• Surface Mount Design: Supplied in a standard SOT-23 case style with 3 pins for easy integration into automated assembly processes.
• High-Temperature Operation: Capable of operating at temperatures up to 150°C.
• Power Handling: Maximum power dissipation of 1.25W.

With its combination of low resistance, solid current handling, and compact form factor, the TSM2306CX is a dependable choice for designers seeking to